AP9960GM - Dual N-Channel Enhancement Mode Power Mosfet
AP9960 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a widerange of power applications.
The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
Vds40V
Vgs±20V
Rds(on) / Max(m?) Vgs@10v20
Rds(on) / Max(m?) Vgs@4.5v32
Qg (nc)14.7
Qgs (nc)7.1
Qgd (nc)6.8
Id(a)7.8
Pd(w)2
ConfigurationDual N
PackageSO-8