AP9960GM - Dual N-Channel Enhancement Mode Power Mosfet

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AP9960GM - Dual N-Channel Enhancement Mode Power MosfetAP9960 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides th ...

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9,84 €

AP9960GM

Disponível em armazem remoto 1-3 Dias

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AP9960GM - Dual N-Channel Enhancement Mode Power Mosfet

AP9960 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a widerange of power applications.
The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.

Vds 40V
Vgs ±20V
Rds(on) / Max(m?) Vgs@10v 20
Rds(on) / Max(m?) Vgs@4.5v 32
Qg (nc) 14.7
Qgs (nc) 7.1
Qgd (nc) 6.8
Id(a) 7.8
Pd(w) 2
Configuration Dual N
Package SO-8

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AP9960GM - Dual N-Channel Enhancement Mode Power Mosfet

AP9960GM - Dual N-Channel Enhancement Mode Power Mosfet

AP9960GM - Dual N-Channel Enhancement Mode Power MosfetAP9960 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides th ...

Escreva a sua opinião

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