NDT2955 - Transistor Mosfet P, 60V, 2.5A, 300mR, SOT-223

NDT2955 - Transistor Mosfet P, 60V, 2.5A, 300mR, SOT-223

Descrição geral do produto
The NDT2955 from Fairchild is a surface mount, 60V P channel enhancement mode field effect transistors in SOT-223 package. Transistor is produced using Fairchild's high voltage trench process and suitable for power management applications.
High density cell design for extremely low Rds(ON)
Drain to source voltage (Vds) of -60V
Gate to source voltage of ±20V
Continuous drain current (Id) of -2.5A
Power dissipation (pd) of 3W
Low on state resistance of 163mohm at Vgs -4.5V
Operating temperature range -55°C to 150°C

Informação do produto
Transistor Polarity:
P Channel
Continuous Drain Current Id:
-2.5A
Drain Source Voltage Vds:
-60V
On Resistance Rds(on):
0.3ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
2.6V
Power Dissipation Pd:
3W
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C