2SB1217 - Transistor, P, 3A, 10W, 60V, TO126
Type Designator: 2SB1217
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 45
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 3
Maksimalna temperatura (Tj), °C: 175
Transition frequency (ft), MHz: 25
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 120
Noise Figure, dB: -
Package of 2SB1217 transistor: TO126
Ficha informativa
- Tipo
- Si
- Canal
- PNP
- Tensão
- 60V
- Corrente
- 3A
- Potência
- 10W
- Caixa
- TO126
- Montagem
- THT