2SB1217 - Transistor, P, 3A, 10W, 60V, TO126

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2SB1217 - Transistor, P, 3A, 10W, 60V, TO126Type Designator: 2SB1217 Material of transistor: Si Polarity: PNP Maximum collector power dissipation (Pc), W: 10 Maximum collector-base voltage |Ucb|, V: 60 Maximum collector-emitter voltage |Uce|, ...

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2SB1217

Armazém remoto 1-3 Dias Úteis

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2SB1217 - Transistor, P, 3A, 10W, 60V, TO126

Type Designator: 2SB1217
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 45
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 3
Maksimalna temperatura (Tj), °C: 175
Transition frequency (ft), MHz: 25
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 120
Noise Figure, dB: -
Package of 2SB1217 transistor: TO126

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2SB1217 - Transistor, P, 3A, 10W, 60V, TO126

2SB1217 - Transistor, P, 3A, 10W, 60V, TO126

2SB1217 - Transistor, P, 3A, 10W, 60V, TO126Type Designator: 2SB1217 Material of transistor: Si Polarity: PNP Maximum collector power dissipation (Pc), W: 10 Maximum collector-base voltage |Ucb|, V: 60 Maximum collector-emitter voltage |Uce|, ...

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